This paper reports the influence of magnetic tunnel junctions on the electrical response of an operational amplifier (op-amp) circuit. As a baseline, the pure-CMOS operational amplifier has been designed using the 180 nm semiconductor process technology from the Taiwan Semiconductor Manufacturing Company Ltd. and the test bench has been simulated to obtain circuit performance metrics like open loop gain, phase, bandwidth and phase margin. The introduction of a magnetic element can upset the electrical behavior and the same has been observed with the introduction of Fe-MgO tunnel junction on the baseline electrical behavior of the operational amplifier test bench. Possibilities of connecting the tunnel junction to the different nodes of the opamp test bench have been explored and the consequent drifts in the electrical response have been studied in this paper. Furthermore, an attempt has been made to mirror the transistors in the op-amp circuit with tunnel junctions and the consequent electrical responses have been studied in this paper. Such a magneto-CMOS hybrid circuit configuration can be used for a wide range of novel applications that demand a higher packing density in limited die area.