{"id":967,"date":"2025-11-18T20:19:04","date_gmt":"2025-11-18T20:19:04","guid":{"rendered":"https:\/\/els-journal.net\/wp\/about\/"},"modified":"2025-11-18T20:28:14","modified_gmt":"2025-11-18T20:28:14","slug":"29203-variation-tolerant-sram-with-enhanced-stability-for-wearable-healthcare-devices","status":"publish","type":"page","link":"https:\/\/els-journal.net\/wp\/?page_id=967","title":{"rendered":"29203 Variation Tolerant SRAM with Enhanced Stability for Wearable Healthcare Devices"},"content":{"rendered":"\n\n\n<h3>Vol. 29, No. 2 &#8211; December 2025<\/h3>\n<h3>Variation Tolerant SRAM with Enhanced Stability for Wearable Healthcare Devices<\/h3>\n<h5>https:\/\/doi.org\/10.53314\/ELS2529062K<\/h5>\n<h5>M. Kavitha, S. Ramani, and P. K. Janani<\/h5>\n<h5><b>Abstract<\/b><\/h5>\n<h5>As technology scales down CNTFET (Carbon Nano&nbsp;<span style=\"font-size: 14px;\">Tube Field Effect Transistor) circuits has gained importance in&nbsp;<\/span><span style=\"font-size: 14px;\">VLSI design due to exacerbation of process parameter variations<\/span><\/h5><h5>in CMOS. Particularly design of SRAM cell needs more attention&nbsp;<span style=\"font-size: 14px;\">as it occupies the larger space in CPU of the battery powered wearable&nbsp;<\/span><span style=\"font-size: 14px;\">devices. Hence it is a challenging task to the chip designer&nbsp;<\/span><span style=\"font-size: 14px;\">because the power, energy, speed and stability of the memory cell&nbsp;<\/span><span style=\"font-size: 14px;\">has a greater impact on system CPU efficiency. A variation tolerant&nbsp;<\/span><span style=\"font-size: 14px;\">nine transistor CNTFET SRAM cell is proposed in this work.&nbsp;<\/span><span style=\"font-size: 14px;\">Metrics considered for investigating the proposed SRAM performance&nbsp;<\/span><span style=\"font-size: 14px;\">is power, delay, power delay product (PDP) and static noise&nbsp;<\/span><span style=\"font-size: 14px;\">margin (SNM). Stanford University 32 nm CNTFET model and&nbsp;<\/span><span style=\"font-size: 14px;\">HSPICE tool is utilised for the simulation. In proposed SRAM the&nbsp;<\/span><span style=\"font-size: 14px;\">read and write power reduction is improved by 4.7x and 9.9x respectively,&nbsp;<\/span><span style=\"font-size: 14px;\">while the read delay and PDP reduction is improved by&nbsp;<\/span><span style=\"font-size: 14px;\">10x than conventional SRAM. The hold, read and write stability&nbsp;<\/span><span style=\"font-size: 14px;\">of proposed memory cell is enhanced by 1.4x, 1.2x and 4.1x respectively&nbsp;<\/span><span style=\"font-size: 14px;\">compared to conventional structure.<\/span><\/h5>\n<h5>Full text:  <a class=\"fas fa-file-pdf\" href=\"https:\/\/els-journal.net\/wp\/wp-content\/uploads\/2025\/11\/2025-29-2-03.pdf\" target=\"_blank\" rel=\"noopener\"><\/a><\/h5>\n\n\n\n\n<a target=\"_blank\" href=\"http:\/\/www.scopus.com\/inward\/citedby.uri?partnerID=HzOxMe3b&#038;doi=10.53314\/ELS2529062K&#038;origin=inward\" ref=\"scopus-citedby\" rel=\"noopener\"><image src=\"http:\/\/api.elsevier.com\/content\/abstract\/citation-count?doi=10.53314\/ELS2529062K&#038;httpAccept=image%2Fjpeg&#038;apiKey=87124910cd33413b75b0a6f4e70d58bd\" border=\"0\" alt=\"cited by count\"\/><\/a>\n\n\n\n\nGoogle Scholar Citations <a target=\"_blank\" class=\"fas fa-external-link-alt\" href=\"http:\/\/scholar.google.com\/scholar?hl=en&#038;lr=&#038;cites=http:\/\/dx.doi.org\/10.53314\/ELS2529062K\" rel=\"noopener\"><\/a>\n\n\n\n\n<center> <span class=\"__dimensions_badge_embed__\" data-doi=\"10.53314\/ELS2529062K\" data-style=\"small_circle\"><\/span> <\/center> <script async src=\"https:\/\/badge.dimensions.ai\/badge.js\" charset=\"utf-8\"><\/script>\n\n\n\n\n<center>Google Scholar Citations <a target=\"_blank\" class=\"fas fa-external-link-alt\" href=\"http:\/\/scholar.google.com\/scholar?hl=en&#038;lr=&#038;cites=http:\/\/dx.doi.org\/10.53314\/ELS2529062K\" rel=\"noopener\"><\/a><\/center>\n\n\n\n\n<a target=\"_blank\" href=\"http:\/\/www.scopus.com\/inward\/citedby.uri?partnerID=HzOxMe3b&#038;doi=10.53314\/ELS2529062K&#038;origin=inward\" ref=\"scopus-citedby\" rel=\"noopener\"><image src=\"http:\/\/api.elsevier.com\/content\/abstract\/citation-count?doi=10.53314\/ELS2529062K&#038;httpAccept=image%2Fjpeg&#038;apiKey=87124910cd33413b75b0a6f4e70d58bd\" border=\"0\" alt=\"cited by count\"\/><\/a>\n\n\n\n\n<center><span class=\"__dimensions_badge_embed__\" data-doi=\"10.53314\/ELS2529062K\" data-style=\"large_rectangle\"><\/span><\/center><script async src=\"https:\/\/badge.dimensions.ai\/badge.js\" charset=\"utf-8\"><\/script>\n\n\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":1,"featured_media":0,"parent":873,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-967","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/pages\/967","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=967"}],"version-history":[{"count":5,"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/pages\/967\/revisions"}],"predecessor-version":[{"id":978,"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/pages\/967\/revisions\/978"}],"up":[{"embeddable":true,"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=\/wp\/v2\/pages\/873"}],"wp:attachment":[{"href":"https:\/\/els-journal.net\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=967"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}